Realisation of membranes for atomic beam collimator by macropore micromachining technique (MMT)

被引：3

作者：

Rossi, AM ^{[1
]}

Amato, G ^{[1
]}

Boarino, L ^{[1
]}

Novero, C ^{[1
]}

机构：

[1] Ist Elettrotecn Nazl Galileo Ferraris, I-10135 Turin, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 69卷

关键词：

D O I：

10.1016/S0921-5107(99)00268-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The macropore formation in n-type silicon by electrochemical etching in hydrofluoric acid is an established technique. In this work we present the realisation and application of macroporous technology to realise a suspended membrane of 300 mu m with pore of 5 mu m right through the membrane. Double electrochemical reactor with a double electrolitical contact has been used. The necessary holes injection for the chemical dissolution is provided by illuminating the back contact of the wafer by halogen lamp. The membrane will be employed as an atomic beam collimator in an experiment of molecular and atomic spectroscopy. Other possible applications range from gas sensor to biomedical application. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：66 / 69

页数：4

共 6 条

[1]

Canham L. T., 1991, APPL PHYS LETT, V58, P856

[2] PROPERTIES OF SILICON-ELECTROLYTE JUNCTIONS AND THEIR APPLICATION TO SILICON CHARACTERIZATION [J].

FOLL, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01) :8-19

[3] THE MAGNESIUM FREQUENCY STANDARD [J].

GODONE, A ;

NOVERO, C .

METROLOGIA, 1993, 30 (03) :163-181

[4]

Hamann C.H., 1998, ELECTROCHEMISTRY

[5] THE PHYSICS OF MACROPORE FORMATION IN LOW DOPED N-TYPE SILICON [J].

LEHMANN, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) :2836-2843

[6]

Ottow S, 1996, APPL PHYS A-MATER, V63, P153

← 1 →