Plasma etching for purification and controlled opening of aligned carbon nanotubes

被引:115
作者
Huang, SM [1 ]
Dai, LM [1 ]
机构
[1] CSIRO, Mol Sci, Clayton, Vic 3169, Australia
关键词
D O I
10.1021/jp014047y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Plasma etching was applied for removal of the amorphous carbon layer that covers aligned carbon nanotube films produced by pyrolysis of metal-containing organometallic precursors. Microscopic and kinetic studies showed that amorphous carbon could be easily removed by H2O-plasma etching while carbon nanotubes remain largely unchanged under relatively mild plasma conditions. Prolonged plasma treatment, however, was found to cause a controllable disintegration of the graphitic structure, leading to a region-selective opening of the aligned carbon nanotubes (e.g., the removal of one end-cap only). Metal-filling was demonstrated to be also possible even with the resultant one-end opened nanotubes.
引用
收藏
页码:3543 / 3545
页数:3
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