Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering

被引:235
作者
Das, R. R.
Kim, D. M.
Baek, S. H.
Eom, C. B. [1 ]
Zavaliche, F.
Yang, S. Y.
Ramesh, R.
Chen, Y. B.
Pan, X. Q.
Ke, X.
Rzchowski, M. S.
Streiffer, S. K.
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[4] Univ Wisconsin, Dept Phys, Madison, WI 53706 USA
[5] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2213347
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have grown epitaxial BiFeO3 thin films with smooth surfaces on (001), (101), and (111) SrTiO3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO3 on high miscut (4 degrees) (001) SrTiO3, which attributes to a relatively high value of remanent polarization (similar to 71 mu C/cm(2)). Films grown on low miscut (0.8 degrees) SrTiO3 have a small amount of impure phase alpha-Fe2O3 which contributes to lower the polarization values (similar to 63 mu C/cm(2)). The BiFeO3 films grown on (101) and (111) SrTiO3 exhibited remanent polarizations of 86 and 98 mu C/cm(2), respectively. (c) 2006 American Institute of Physics.
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页数:3
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