An integrated experimental and theoretical investigation on Cu(hfa)2•TMEDA: structure, bonding and reactivity

被引:40
作者
Bandoli, Giuliano [3 ]
Barreca, Davide [1 ,2 ]
Gasparotto, Alberto
Seraglia, Roberta [1 ,2 ]
Tondello, Eugenio
Devi, Anjana [4 ]
Fischer, Roland A. [4 ]
Winter, Manuela [4 ]
Fois, Ettore [5 ,6 ]
Gambae, Aldo [5 ,6 ]
Tabacchi, Gloria [5 ,6 ]
机构
[1] Univ Padua, CNR, ISTM, I-35131 Padua, Italy
[2] Univ Padua, Dept Chem, ISTM, I-35131 Padua, Italy
[3] Univ Padua, Dept Pharmaceut Sci, I-35131 Padua, Italy
[4] Ruhr Univ Bochum, Inorgan Mat Chem Grp, Lehrstuhl Anorgan Chem 2, D-44780 Bochum, Germany
[5] Insubria Univ, Dept Chem & Environm Sci, I-22100 Como, Italy
[6] INSTM, I-22100 Como, Italy
关键词
CHEMICAL-VAPOR-DEPOSITION; OXIDE THIN-FILMS; CVD PRECURSORS; CONSISTENT PSEUDOPOTENTIALS; COPPER(II) COMPLEXES; THERMAL-PROPERTIES; CRYSTAL-STRUCTURE; HIGHLY VOLATILE; HARTREE-FOCK; METAL;
D O I
10.1039/b904145a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The physico-chemical properties of the beta-diketonate diamine Cu(II) compound with hfa (1,1,1,5,5,5-hexafluoro-2-4-pentanedionate) and TMEDA (N,N,N',N' tetramethylethylenediamine), Cu(hfa)(2)center dot TMEDA, have been thoroughly investigated via an integrated multi-technique experimental-computational approach. In the newly found orthorhombic polymorph, as revealed by low temperature single-crystal X-ray studies, the complex is present as a monomer with a distorted octahedral geometry at the Cu(II) centre. The compound sublimates, without premature side decompositions, at 343 K and 10(-3) Torr. The structural, vibrational, electronic and thermal behavior of the neutral Cu(hfa)(2)center dot TMEDA complex has been investigated along with its fragmentation pathways, initiated by the release of an anionic hfa ligand with formation of a positive Cu(hfa)center dot TMEDA(+) ion. Joint experimental and theoretical analyses led to the rationalization of the first fragmentation steps in terms of the Cu(II)-ligands bonding properties and Jahn-Teller distortion. The present study suggests applications of Cu(hfa)(2)center dot TMEDA as a precursor for copper and copper oxide materials by Chemical Vapor Deposition.
引用
收藏
页码:5998 / 6007
页数:10
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