Electrical properties of Ta2O5 thin films deposited on Cu

被引：37

作者：

Ezhilvalavan, S

Tseng, TY ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2000年 / 360卷 / 1-2期

关键词：

electrical properties; copper; tantalum; oxides;

D O I：

10.1016/S0040-6090(99)00873-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and dielectric properties of reactively sputtered Ta2O5 thin films with Cu as the top and bottom electrodes forming a simple metal insulator metal (MIM) structure, Cu/Ta2O5/Cu/n-Si, were studied. Ta2O5 films subjected to rapid thermal annealing (RTA) at 800 degrees C for 30 s in N-2 ambient crystallized the film, decreased the leakage current density and resulted in reliable time-dependent dielectric breakdown characteristics. The conduction mechanism at low electric fields (<100 kV/cm) is due to Ohmic conduction; however, the Schottky mechanism becomes predominant at high fields (>100 kV/cm). Present studies demonstrate the use of Cu as a potential electrode material to replace the conventional precious metal electrodes for Ta2O5 storage capacitors. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：268 / 273

页数：6

共 20 条

[1] Evaluation of a copper metallization process and the electrical characteristics of copper-interconnected quarter-micron CMOS [J].