Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

被引：61

作者：

Cheng, An-Jen ^{[2
]}

Tzeng, Yonhua ^{[2
,3
]}

Xu, Hui ^{[1
]}

Alur, Siddharth ^{[1
]}

Wang, Yaqi ^{[1
]}

Park, Minseo ^{[1
]}

Wu, Tsung-hsueh ^{[4
]}

Shannon, Curtis ^{[4
]}

Kim, Dong-Joo ^{[5
]}

Wang, Dake ^{[6
]}

机构：

[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[2] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect & Comp Engn, Auburn, AL 36849 USA

[3] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[4] Auburn Univ, Dept Chem & Biochem, Auburn, AL 36849 USA

[5] Auburn Univ, Mat Res & Educ Ctr, Dept Mech Engn, Auburn, AL 36849 USA

[6] Furman Univ, Dept Phys, Greenville, SC 29613 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 07期

基金：

美国国家科学基金会;

关键词：

PHOTOLUMINESCENCE; SCATTERING; RESONANCE; NANOWIRES; LIGHT;

D O I：

10.1063/1.3093877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of vertically aligned ZnO nanorods have been investigated using micro-Raman spectroscopy. The concentration and mobility of the charge carriers were determined via Raman line shape analysis using longitudinal-optical-phonon-plasmon coupled mode. The local laser heating and the stress effects have been considered when analyzing the Raman spectra. The mobility and carrier concentration of the aligned ZnO nanorods are 84.8 cm(2)/V s and 3.8 x 10(17) cm(-3), respectively. As a comparison, the mobility and carrier concentration of the undoped bulk ZnO were also obtained from the Raman line shape analysis. The mobility of the aligned ZnO nanorods is about 20% lower than that of the undoped bulk ZnO, which can be attributed to enhanced surface scattering due to the reduction in dimension. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3093877]

引用

页数：7

共 37 条

[1] Origin of the optical phonon frequency shifts in ZnO quantum dots [J].

Alim, KA ;

Fonoberov, VA ;

Balandin, AA .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3

[2] Micro-Raman investigation of optical phonons in ZnO nanocrystals [J].

Alim, KA ;

Fonoberov, VA ;

Shamsa, M ;

Balandin, AA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (12)

[3] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[4] Infrared dielectric functions and phonon modes of high-quality ZnO films [J].

Ashkenov, N ;

Mbenkum, BN ;

Bundesmann, C ;

Riede, V ;

Lorenz, M ;

Spemann, D ;

Kaidashev, EM ;

Kasic, A ;

Schubert, M ;

Grundmann, M ;

Wagner, G ;

Neumann, H ;

Darakchieva, V ;

Arwin, H ;

Monemar, B .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :126-133

[5] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[6] RAMAN-STUDY OF THE PHONON HALFWIDTHS AND THE PHONON PLASMON COUPLING IN ZNO [J].

BAIRAMOV, BH ;

HEINRICH, A ;

IRMER, G ;

TOPOROV, VV ;

ZIEGLER, E .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (01) :227-234

[7] ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON [J].

BALKANSKI, M ;

WALLIS, RF ;

HARO, E .

PHYSICAL REVIEW B, 1983, 28 (04) :1928-1934

[8] DISPERSION OF RAMAN CROSS-SECTION IN CDS AND ZNO OVER A WIDE ENERGY RANGE [J].

CALLENDER, RH ;

SUSSMAN, SS ;

SELDERS, M ;

CHANG, RK .

PHYSICAL REVIEW B, 1973, 7 (08) :3788-3798

[9] Thermal chemical vapor deposition growth of zinc oxide nanostructures for dye-sensitized solar cell fabrication [J].

Cheng, An-Jen ;

Tzeng, Yonhua ;

Zhou, Yi ;

Park, Minseo ;

Wu, Tsung-hsueh ;

Shannon, Curtis ;

Wang, Dake ;

Lee, Wonwoo .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[10] Raman scattering and efficient UV photoluminescence from well-aligned ZnO nanowires epitaxially grown on GaN buffer layer [J].

Cheng, HM ;

Hsu, HC ;

Tseng, YK ;

Lin, LJ ;

Hsieh, WF .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (18) :8749-8754

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