Direct parameter extraction for hot-carrier reliability simulation

被引：2

作者：

Minehane, S ^{[1
]}

Healy, S ^{[1
]}

OSullivan, P ^{[1
]}

McCarthy, K ^{[1
]}

Mathewson, A ^{[1
]}

Mason, B ^{[1
]}

机构：

[1] GEC PLESSY SEMICOND,PLYMOUTH PL6 7BQ,DEVON,ENGLAND

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00081-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes the application of a novel direct parameter extraction strategy for the BSIM3v3 MOSFET model to the hot-carrier reliability simulation problem. The use of direct extraction procedures allows a very fast extraction of circuit reliability parameters, with a minimum of measurements, and produces physically relevant parameters. The evolution of the extracted parameters during a hot-carrier stress can then be investigated, and the fit of a power-law model to this evolution can be examined. (C) 1997 Elsevier Science Ltd.

引用

页码：1437 / 1440

页数：4

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