A general atmospheric pressure chemical vapor deposition synthesis and crystallographic study of transition-metal sulfide one-dimensional nanostructures

被引:39
作者
Ge, JP
Wang, J
Zhang, HX
Li, YD [1 ]
机构
[1] Tsinghua Univ, Dept Chem, Key Lab Atom & Mol Nanosci, Minist Educ, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Nanoscale Phys & Devices Lab, Beijing 100080, Peoples R China
关键词
chemical vapor deposition; nanostructures; sulfur; transition metals;
D O I
10.1002/chem.200400008
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A series of transition-metal sulfide one-dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour-liquid-solid (VLS) and vapour-solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (100), (110), or (00x) directions owing to particular crystal structures. ne adopted synthetic route was expected to provide abundant useful 1D building blocks for the research of mesoscopic physics and fabrication of nanoscale devices.
引用
收藏
页码:3525 / 3530
页数:6
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