Influence of H-2 on electrical and optical properties of carbon-doped InP grown by MOMBE using tertiarybutylphosphine (TBP)

The influence of the introduction of H-2 during growth on electrical and optical properties of carbon-doped InP is discussed. The existence of H-2 in the cracker affects the tertiarybutylphosphine (TBP) cracking behavior. According to the initial mass spectroscopic study, it was found that the decomposition of carbon-containing species originating from TBP is enhanced when they are cracked in ambient H-2. As a result, the increase of the electron concentration of InP grown under the introduction of H-2 is presumably attributed to the increase of the incorporation of a carbon donor. It was also found that a phosphorus polymer, which contributes to the epitaxial growth of InP, in the direct beam cracked under H-2, is slightly decreased. This leads to the reduction of an effective V/III ratio on the growing surface and may be responsible for the drastic change in the PL characteristics.