Dislocation patterning:: The role of climb in meso-scale simulations

被引:46
作者
Bako, B.
Groma, I.
Gyorgyi, G.
Zimanyi, G.
机构
[1] Eotvos Lorand Univ, Inst Phys, H-1117 Budapest, Hungary
[2] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
基金
匈牙利科学研究基金会;
关键词
dislocation patterning; temperature and climb; cell structure formation;
D O I
10.1016/j.commatsci.2005.12.034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Simulation of parallel dynamics of edge dislocations in a 2D hexagonal lattice is carried out on a large scale by means of coarse graining, in the absence of external strain. In order to study the effect of climb on dislocation pattern formation, we allowed (i) isotropic (ii) biased (iii) only glide mobility. Moreover we annihilated dislocations with opposite Burgers vectors close to each other. The main result is that in cases (i) and (ii) cellular structure emerges, for (ii) this happens after a longer transient, while (iii) gives a diffuse looking pattern, similar to former single slip plane simulations. In the course of the evolution of dislocation number and cell size they statistically well satisfy Holt's relation. The cell structure found appears to have a characteristic cell size, in contrast to fractal examples in the presence of mechanical strain. Despite the simplicity of our model, the results are consistent with the recently detected low-density dislocation patterns in melt-grown, non-post-deformed crystals. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:22 / 28
页数:7
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