Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells

被引：49

作者：

McCann, PJ ^{[1
]}

Namjou, K ^{[1
]}

Fang, XM ^{[1
]}

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Lab Elect Properties Mat, Norman, OK 73019 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 23期

关键词：

D O I：

10.1063/1.125403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong photoluminescence between 3 and 4 mu m was observed at temperatures as high as 55 degrees C from PbSe/PbSrSe multiple-quantum-well structures grown on BaF2 (111) substrates by molecular-beam epitaxy. Fabry-Perot interference fringes dominated the spectra, indicating that the luminescence was primarily due to stimulated emission processes. Peak emission energies were determined by fitting Gaussian functions to the spectra, and they showed that emission energies at 25 degrees C decreased from 402 to 312 meV as quantum-well thickness increased from 40 to 200 Angstrom. The temperature tuning coefficient was also observed to decrease from 0.400 meV/K for a 200 Angstrom multiple-quantum-well sample to 0.313 meV/K for a 40 Angstrom multiple-quantum-well sample. (C) 1999 American Institute of Physics. [S0003-6951(99)02149-X].

引用

页码：3608 / 3610

页数：3

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