Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells

被引:49
作者
McCann, PJ [1 ]
Namjou, K [1 ]
Fang, XM [1 ]
机构
[1] Univ Oklahoma, Sch Elect & Comp Engn, Lab Elect Properties Mat, Norman, OK 73019 USA
关键词
D O I
10.1063/1.125403
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strong photoluminescence between 3 and 4 mu m was observed at temperatures as high as 55 degrees C from PbSe/PbSrSe multiple-quantum-well structures grown on BaF2 (111) substrates by molecular-beam epitaxy. Fabry-Perot interference fringes dominated the spectra, indicating that the luminescence was primarily due to stimulated emission processes. Peak emission energies were determined by fitting Gaussian functions to the spectra, and they showed that emission energies at 25 degrees C decreased from 402 to 312 meV as quantum-well thickness increased from 40 to 200 Angstrom. The temperature tuning coefficient was also observed to decrease from 0.400 meV/K for a 200 Angstrom multiple-quantum-well sample to 0.313 meV/K for a 40 Angstrom multiple-quantum-well sample. (C) 1999 American Institute of Physics. [S0003-6951(99)02149-X].
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页码:3608 / 3610
页数:3
相关论文
共 16 条
[1]   Above-room-temperature optically pumped midinfrared W lasers [J].
Bewley, WW ;
Felix, CL ;
Aifer, EH ;
Vurgaftman, I ;
Olafsen, LJ ;
Meyer, JR ;
Lee, H ;
Martinelli, RU ;
Connolly, JC ;
Sugg, AR ;
Olsen, GH ;
Yang, MJ ;
Bennett, BR ;
Shanabrook, BV .
APPLIED PHYSICS LETTERS, 1998, 73 (26) :3833-3835
[2]   High-power continuous-wave quantum cascade lasers [J].
Faist, J ;
Tredicucci, A ;
Capasso, F ;
Sirtori, C ;
Sivco, DL ;
Baillargeon, JN ;
Hutchinson, AL ;
Cho, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (02) :336-343
[3]   Molecular beam epitaxy of periodic BaF2/PbEuSe layers on Si(111) [J].
Fang, XM ;
Wu, HZ ;
Shi, Z ;
McCann, PJ ;
Dai, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1297-1300
[4]   Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation [J].
Findlay, PC ;
Pidgeon, CR ;
Kotitschke, R ;
Hollingworth, A ;
Murdin, BN ;
Langerak, CJGM ;
van der Meer, AFG ;
Ciesla, CM ;
Oswald, J ;
Homer, A ;
Springholz, G ;
Bauer, G .
PHYSICAL REVIEW B, 1998, 58 (19) :12908-12915
[5]   Demonstration of high-performance 10.16 μm quantum cascade distributed feedback lasers fabricated without epitaxial regrowth [J].
Hofstetter, D ;
Faist, J ;
Beck, M ;
Müller, A ;
Oesterle, U .
APPLIED PHYSICS LETTERS, 1999, 75 (05) :665-667
[6]  
Katzir A., 1989, HDB SOLID STATE LASE, P227
[7]  
Kurtz SR, 1996, APPL PHYS LETT, V68, P1332, DOI 10.1063/1.115925
[8]   MOLECULAR-BEAM EPITAXY OF PB1-XSRXSE FOR THE USE IN IR DEVICES [J].
LAMBRECHT, A ;
HERRES, N ;
SPANGER, B ;
KUHN, S ;
BOTTNER, H ;
TACKE, M ;
EVERS, J .
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :301-308
[9]   Finite-element modeling predicts possibility of thermoelectrically cooled lead-salt diode lasers [J].
Lewelling, KR ;
McCann, PJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) :297-299
[10]   Type II mid-infrared quantum well lasers [J].
Malin, JI ;
Meyer, JR ;
Felix, CL ;
Lindle, JR ;
Goldberg, L ;
Hoffman, CA ;
Bartoli, FJ ;
Lin, CH ;
Chang, PC ;
Murry, SJ ;
Yang, RQ ;
Pei, SS .
APPLIED PHYSICS LETTERS, 1996, 68 (21) :2976-2978