Turning of Basal Plane Dislocations During Epitaxial Growth on 4° off-axis 4H-SiC

被引：53

作者：

Myers-Ward, R. L. ^{[1
]}

Van Mil, B. L. ^{[1
]}

Stahlbush, R. E. ^{[1
]}

Katz, S. L. ^{[1
]}

McCrate, J. M. ^{[1
]}

Kitt, S. A. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Gaskill, D. K. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4 degrees off-axis; basal plane dislocations; epitaxy; 4H-SiC;

D O I：

10.4028/www.scientific.net/MSF.615-617.105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial layers were grown oil 4 degrees off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in lower basal plane dislocation (BPID) densities. The dependence of BPD reduction on growth conditions was investigated using ultraviolet photoluminescence (UVPL) imaging. With this method, it was found that the dislocations were converting to threading edge dislocations throughout the thickness of the film. A high (>= 97%) conversion efficiency was found for all films grown with this orientation. A conversion of 100% was achieved for several films without pre-growth treatments or growth interrupts.

引用

页码：105 / 108

页数：4

共 9 条

[1] Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles -: art. no. 114907 [J].