Low pressure MOCVD of TiN thin films

被引：18

作者：

Kim, SW

Jimba, H

Sekiguchi, A

Okada, O

Hosokawa, N

机构：

[1] Research and Development Division, Anelva Corporation, Fuchu, Tokyo 183

来源：

APPLIED SURFACE SCIENCE | 1996年 / 100卷

关键词：

Ammonia - Aspect ratio - Calculations - Contour measurement - Electric conductivity of solids - Electric contacts - Pressure - Regression analysis - Temperature - Thin films - Titanium nitride;

D O I：

10.1016/0169-4332(96)00456-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

From multiple regression analysis in the bottom coverage and resistivity of TiN films deposited using tetrakis(diethylamino)titanium (TDEAT), contour maps were calculated as functions of wafer temperature and reactor pressure. High bottom coverage and low resistivity were predicted at low pressure and low temperature with NH3 additives. Films have been deposited below 400 degrees C and total reactor pressures below 133.3 Pa. Especially by adding a little NH3 to TDEAT, bottom coverages of 100% have been accomplished in 4.0 aspect ratio contacts with 300 nm diameter. Film resistivities have been also decreased from 24,000 mu Omega cm to about 10,000 mu Omega cm with 15 seem NH3.

引用

页码：546 / 550

页数：5