Sol-gel Er-doped SiO2-HfO2 planar waveguides:: A viable system for 1.5 μm application

被引:103
作者
Gonçalves, RR
Carturan, G
Zampedri, L
Ferrari, M
Montagna, M
Chiasera, A
Righini, GC
Pelli, S
Ribeiro, SJL
Messaddeq, Y
机构
[1] Univ Trent, Dipartimento Ingn Mat, I-38050 Trento, Italy
[2] CNR, IFN, I-38050 Trento, Italy
[3] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy
[4] Univ Trent, INFM, I-38050 Trento, Italy
[5] CNR, IFAC, Inst Fis Applicata Nello Carrara, I-50127 Florence, Italy
[6] Inst Chem, UNESP, Araraquara, Brazil
关键词
D O I
10.1063/1.1489477
中图分类号
O59 [应用物理学];
学科分类号
摘要
70SiO(2)-30HfO(2) planar waveguides, doped with Er3+ concentrations ranging from 0.3 to 1 mol %, were prepared by sol-gel route, using dip-coating deposition on silica glass substrates. The waveguides show high densification degree, effective intermingling of the two components of the film, and uniform surface morphology. Propagation losses of about 1 dB/cm were measured at 632.8 nm. When pumped with 987 or 514.5 nm continuous-wave laser light, the waveguides show the I-4(13/2)-->I-4(15/2) emission band with a bandwidth of 48 nm. The spectral features are found independent both on erbium content and excitation wavelength. The I-4(13/2) level decay curves presented a single-exponential profile, with a lifetime between 2.9 and 5.0 ms, depending on the erbium concentration. (C) 2002 American Institute of Physics.
引用
收藏
页码:28 / 30
页数:3
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