MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

被引：77

作者：

Fukuzawa, H ^{[1
]}

Yuasa, H ^{[1
]}

Hashimoto, S ^{[1
]}

Koi, K ^{[1
]}

Iwasaki, H ^{[1
]}

Takagishi, M ^{[1
]}

Tanaka, Y ^{[1
]}

Sahashi, M ^{[1
]}

机构：

[1] Toshiba Co Ltd, Tokyo, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 04期

关键词：

CPP-GMR; current-confined-path; oxides; spin valves;

D O I：

10.1109/TMAG.2004.829185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 mOmegamum(2), whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 mOmegamum(2). Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 mOmegamum(2). The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.

引用

页码：2236 / 2238

页数：3

共 8 条

[1] Current-perpendicular (CPP) magnetoresistance in magnetic metallic multilayers [J].