Characterization of nano-oxide layers fabricated by ion beam oxidation

被引：5

作者：

Cardoso, S ^{[1
]}

Zhang, ZZ

Li, HH

Ferreira, R

Freitas, PP

Wei, P

Soares, JC

Snoeck, E

Batlle, X

机构：

[1] Inst Engn Sisetmas & Computadores Microsyst & Nan, Lisbon, Portugal

[2] Inst Super Tecn, Lisbon, Portugal

[3] Inst Tecnol & Nucl, Sacavem, Portugal

[4] Univ Lisbon, Ctr Fis Nucl, P-1699 Lisbon, Portugal

[5] CNRS, CEMES, Toulouse, France

[6] Univ Barcelona, Dept Fis Fonamental, Barcelona, Spain

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期

关键词：

ion oxidation; nano-oxide layers; transmission electron microscopy; tunnel junctions;

D O I：

10.1109/TMAG.2002.802863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a remote O-2 ion source is used for the formation of nano-oxide layers. The oxidation efficiency was measured in CoFe-oxide films, and a decrease of the oxide layer with the pan angle and the oxidation pressure is observed. For the same oxidation pressure, the oxidation efficiency depends on the O-2 content in the Ar-O-2 plasma. These results were applied in optimizing the fabrication of Al2O3 barrier for tunnel junctions. This method was also used to fabricate junctions with Fe-oxide layers inserted at the Al2O3-CoFe interface. TEM and magnetization data indicate that after anneal at 385 degreesC, a homogeneous ferromagnetic Fe-oxide layer (Fe3O4?) is formed.

引用

页码：2755 / 2757

页数：3

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