The indentation response of GaAs-AlAs heterostructures

被引：3

作者：

Castell, MR

Shafirstein, G

Ritchie, DA

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

[2] NATL PHYS LAB,TEDDINGTON TW11 0WL,MIDDX,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1996年 / 74卷 / 05期

关键词：

D O I：

10.1080/01418619608239718

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-load indentation has been used to investigate the deformation behaviour of a submicron layer of AlAs on a GaAs substrate. High-resolution scanning electron microscopy of cross-sections through the deformed regions under indentations into this structure reveals that the softer AlAs layer is not penetrated by the indenter and that unusual lateral cracking originates during the unloading phase. Data of intendation load against depth demonstrates the effect of the layer through the increase in composite hardness and elastic modulus with increasing load.

引用

收藏

页码：1185 / 1194

页数：10

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