Organic thin film transistors: From theory to real devices

被引:725
作者
Horowitz, G [1 ]
机构
[1] Univ Paris 07, CNRS, UMR 7086, ITODYS, F-75005 Paris, France
关键词
D O I
10.1557/JMR.2004.0266
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The organic thin-film transistor (OTFT) is now a mature device that has developed tremendously during the last twenty years. The aim of this paper is to update previous reviews on that matter that have been published in the past. The operating mode of OTFTs is analyzed in view of recent model development. This mainly concerns the distribution of charges in the conducting channel and problems connected with contact resistance. We also delineate what differentiates n- and p-type semiconductors, and show how this concept differs from what it covers in conventional semiconductors. In the chapter devoted to fabrication techniques, emphasis is placed on solution-based techniques and particularly printing processes. Similarly, soluble materials are given a prominent place in the section dedicated to the performance of devices. Finally, special attention is given to devices at the nanoscale level, which demonstrate a new route toward molecular electronics.
引用
收藏
页码:1946 / 1962
页数:17
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