Strain-balanced GaAsP/InGaAs quantum well solar cells

被引：231

作者：

Ekins-Daukes, NJ

Barnham, KWJ

Connolly, JP

Roberts, JS

Clark, JC

Hill, G

Mazzer, M

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BZ, England

[2] Univ Sheffield, Sheffield S1 3JD, S Yorkshire, England

[3] CNR, Ist Nuovi Mat & Elettron, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strain-balance multiquantum well (MQW) approach to enhance the GaAs solar cell efficiency is reported. Using a p-i-n diode structure, the strain-balanced GaAsP/InGaAs MQW is grown on a GaAs substrate and equals a good GaAs cell in terms of power conversion efficiency. The cell design is presented together with measurements of the forward bias dark current density, quantum efficiency, and 3000 K light-IV response. Cell efficiencies under standard air mass (AM) 1.5 and AM 0 illumination are projected from experimental data and the suitability of this cell for enhancing GaInP/GaAs tandem cell efficiencies is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)04752-X].

引用

页码：4195 / 4197

页数：3

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