Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%

被引：511

作者：

Jackson, Philip ^{[1
]}

Hariskos, Dimitrios ^{[1
]}

Wuerz, Roland ^{[1
]}

Wischmann, Wiltraud ^{[1
]}

Powalla, Michael ^{[1
]}

机构：

[1] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2014年 / 8卷 / 03期

关键词：

CIGS; thin films; solar cells; composition; efficiency; doping; MODULES;

D O I：

10.1002/pssr.201409040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the interaction between intentional potassium doping of thin film Cu(In,Ga)Se-2 (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high efficiency CIGS solar cells could not be produced with a gallium/(gallium + indium) ratio higher than 35%. The new doping process step does not only increase solar cell conversion efficiencies up to 20.8%, but also allows a shift in the CIGS absorber composition towards higher gallium content whilst maintaining this high efficiencies level. We find that the saturation of the open circuit voltages for higher gallium content that is normally observed can partially be overcome by the new doping procedure. This observation leads us to the conclusion that even on this high performance level CIGS solar cells still hold a potential for further development beyond the record values reported here. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：219 / 222

页数：4

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