Carbon nitrides synthesized by glow discharge method

被引：7

作者：

Li, ZQ ^{[1
]}

Zhou, JY

Zhang, J

Chen, TB

Yuan, J

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2002年 / 346卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

nitride materials; synthesis; X-ray diffraction; photoelectron spectroscopy; SEM;

D O I：

10.1016/S0925-8388(02)00484-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Carbon nitrides were synthesized by a glow discharge method. The characterization of the carbon nitrides was carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared (FTIR) spectroscopy, as well as X-ray photoelectron spectroscopy (XPS). The structure of the resulting material is strongly dependent on the synthesis temperature. Crystalline alpha-C3N4 and amorphous graphite were obtained at 500 degreesC. After having been annealed at 500 degreesC the amorphous graphite transformed into the Chaoite structure. An orthorhombic structure with a=0.270 nm, b=0.718 nm and c=0.970 nm was obtained in the specimen synthesized at 800 'C. FTIR and XPS confirmed that this orthorhombic phase is a carbon nitride with an N:C ratio of about 0.63. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：230 / 234

页数：5

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