Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-Ultra

被引:6
作者
de Chambost, E [1 ]
Merkulov, A [1 ]
Peres, P [1 ]
Rasser, B [1 ]
Schuhmacher, M [1 ]
机构
[1] CAMECA SA, F-92400 Courbevoie, France
关键词
SIMS boron; implant; dose; mapping; repeatability;
D O I
10.1016/j.apsusc.2004.03.202
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SIMS depth profiles for full wafer analyses were carried out on the CAMECA IMS Wf instrument. Experiments have been performed in order to investigate the analytical performance of this SIMS instrument for shallow, medium and deep profiles in terms of measurement repeatability and sample throughput. First results using a cassette loader option implemented on the IMS Wf are presented. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:949 / 953
页数:5
相关论文
共 3 条
[1]  
BITNER T, 1999, P SIMS 12 INT C BRUS
[2]   Depth scale calibration of SIMS depth profiles by means of an online crater depth measurement technique [J].
De Chambost, E ;
Monsallut, P ;
Rasser, B ;
Schuhmacher, M .
APPLIED SURFACE SCIENCE, 2003, 203 :391-395
[3]  
DECHAMBOST E, 1999, P SIMS 12 INT C BRUS