Modified titanium dioxide photocatalysts for the enhanced photodegradation of organic substrates

被引:10
作者
Ranjit, KT [1 ]
Willner, I
Bossmann, S
Braun, A
机构
[1] Hebrew Univ Jerusalem, Inst Chem, IL-91904 Jerusalem, Israel
[2] Hebrew Univ Jerusalem, Farkas Ctr Light Induced Proc, IL-91904 Jerusalem, Israel
[3] Univ Karlsruhe, Lehrstuhl Umweltmesstech, Engler Bunte Inst, D-76128 Karlsruhe, Germany
关键词
D O I
10.1163/156856799X00653
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two approaches to generate TiO2 photocatalyst for the enhanced photodegradation of substrates are described. One approach includes the surface modification of TiO2, with a layer consisting of a N,N'-bipyridinium pi-acceptor layer. The resulting photocatalyst reveals superior photocatalytic activity as compared to the non-modified TiO2 for the decomposition of pi-donor substrates such as 1,4-dimethoxybenzene (1), 1,2-dimethoxybenzene (2) and indole(3). The enhanced photocatalytic activity of the modified TiO2, V2+-TiO2 is attributed to the concentration of the pollutant at the heterogeneous catalyst surface via the formation of supramolecular pi donor-acceptor complexes. A second approach to improve the photocatalytic activity of TiO2, involves its doping with Fe(III)-Phthalocyanine, Fe(III)-Pc. The Fe(III)-Pc doped TiO2, Fe(III)-Pc/TiO2 is formed by the sol-gel method. The series of organic substrates p-nitrobenzoic acid (5), p-aminobenzoic acid (6), p-chlorophenoxyacetic acid (7), salicylic acid (8) and aniline (9), is effectively degraded by the Fe(III)Pc/TiO2 catalyst compared to the non-modified catalyst. Photodegradation of the organic pollutants in the presence of Fe(III)-Pc/TiO2, is substantially enhanced as compared to non-modified TiO2, and leads to complete mineralization. The enhanced activity of the Fe(III)-Pc doped TiO2, is attributed to the synergistic generation of (OH)-O-. radical, the active species in the degradation of the organic substrates, at the semiconductor surface, via the photochemical cleavage of light-induced generated H2O2 at the semiconductor surface.
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收藏
页码:733 / 756
页数:24
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