Magnetoresistance of single Co nanowires

被引：95

作者：

Dumpich, G ^{[1
]}

Krome, TP ^{[1
]}

Hausmanns, B ^{[1
]}

机构：

[1] Gerhard Mercator Univ Duisburg, D-47048 Duisburg, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2002年 / 248卷 / 02期

关键词：

magneto resistance; nanowires; magnetization reversal process; EBL;

D O I：

10.1016/S0304-8853(02)00347-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline single Co nanowires are prepared by electron beam lithography on GaAs substrates at room temperature. The width of the Co nanowires is varied between 150 and 4000 nm. Magnetoresistance measurements are carried out in a temperature range between 1.5 and 45 K applying magnetic fields mu(0)H up to 4.5 T parallel and perpendicular to the current direction. The in plane (longitudinal) magnetoresistance (MR) shows pronounced features at magnetic fields H, (coercive fields) indicating the magnetization reversal process. From the MR-curves we determined H-c as a function of the angle a between current and field direction (from in plane to out of plane) and of the width w of the Co nanowires. The H-c = H-c(alpha, w) behavior allows to discuss the reversal process in more detail. (C) 2002 Published by Elsevier Science B.V.

引用

页码：241 / 247

页数：7

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