Fabrication and characterisation of NiO/ZnO structures

被引：58

作者：

Nel, JM

Auret, FD ^{[1
]}

Wu, L

Legodi, MJ

Meyer, WE

Hayes, M

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Univ Manchester, Ctr Elect Mat Devices & Nanostruct, Manchester M60 1QD, Lancs, England

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 100卷 / 1-2期

基金：

新加坡国家研究基金会;

关键词：

nickel oxide; zinc oxide; rectifying junction; electrical properties;

D O I：

10.1016/j.snb.2003.12.054

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Metal-oxide-semiconductor (MOS) structures were formed on n-ZnO and the electrical properties were compared to An Schottky barrier diodes (SBDs) on similar ZnO. After evaporating Ni onto either ZnO, Si or glass, the thin films were oxidised to produce transparent, resisitive layers. The structure and composition of these layers were studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron microscopy. The electrical properties were investigated by variable temperature current-voltage (I-V) and four-point probe measurements, whereas the optical properties were investigated by photospectrometry. The influence of oxidation temperature on the resistivity of the nickel oxide layers was used to optimise the processing conditions. NiO layers had a maximum resistivity of approximately 100 Omega cm after oxidation and bandgap of 3.5-3.6 eV at room temperature. The rectifying qualities of the junctions (using Pd gates) were sufficient for DLTS measurements of ZnO in the temperature range 20-390 K. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：270 / 276

页数：7

共 18 条

[1] ZnO diode fabricated by excimer-laser doping [J].