A high performance MIM capacitor using HfO2 dielectrics

被引：134

作者：

Hu, H ^{[1
]}

Zhu, CX ^{[1
]}

Lu, YF ^{[1
]}

Li, MF ^{[1
]}

Cho, BJ ^{[1
]}

Choi, WK ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 09期

关键词：

high-kappa; MIM capacitor; temperature coefficient; thin-film devices; voltage linearity;

D O I：

10.1109/LED.2002.802602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-metal (MIM) capacitors with a 56-nm-thick HfO2 high-kappa dielectric film have been fabricated and demonstrated for the first of time with a low thermal budget (similar to200 degreesC). Voltage linearity, temperature coefficients of capacitance, and electrical properties are all characterized. The results show that the HfO2 MIM capacitor can provide a higher capacitance density than Si3N4 MIM capacitor while still maintaining comparable voltage and temperature coefficients of capacitance. In addition, a low leakage current of 2 x 10(-9) A/cm(2) at 3 V is achieved. All of these make the HfO2 MIM capacitor to be very suitable for use in silicon RF and mixed signal IC applications.

引用

页码：514 / 516

页数：3

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