Electro-optic beam scanner in KTiOPO4

被引：19

作者：

Chiu, Y ^{[1
]}

Stancil, DD ^{[1
]}

Schlesinger, TE ^{[1
]}

Risk, WP ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.116806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and demonstrated both wafer and waveguide electro-optic beam scanners in KTiOPO4 using alternating domain-inverted triangular patterns in the substrate. This devise is an extension of previous work in LiTaO3. The domain inversion was achieved by pulsed electric field poling. The deflection sensitivity was 2.1 mrad/kV, compared to the calculated value of 2.3 mrad/kV for this geometry. The bandwidth of the devices uas measured to be at least 200 kHz. which was limited by the high voltage driver. (C) 1996 American Institute of Physics.

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页码：3134 / 3136

页数：3

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