Characterisation by thermoluminescence of boron doped polycrystalline diamond films

被引:17
作者
Benabdesselam, M
Iacconi, P
Briand, D
Lapraz, T
Gheeraert, E
Deneuville, A
机构
[1] Univ Nice, CRESA, Ctr Rech Solides & Leurs Applicat, Lab Phys Elect Solides, F-06108 Nice 2, France
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble, France
关键词
boron; CVD diamond; impurity incorporation; thermoluminescence;
D O I
10.1016/S0925-9635(99)00243-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped polycrystalline diamond presents two thermoluminescent (TL) peaks at 480 and 560 K which may potentially be used for ionising radiation dosimetry. In order to increase the TL response sensitivity, CVD diamond samples doped with various boron concentrations have been elaborated. The sim of this work is to investigate the TL properties of these samples in relation with the boron concentration. For concentrations lower than 15 ppm (3 x 10(18) cm(-3)), the intensity of the 480 and 560 K TL peaks are effectively the most important, but for concentration values higher than 15 ppm, the TL signal decreases. Simultaneously, a new peak appears at 340 K. TL mechanisms related to these peaks are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:56 / 60
页数:5
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