Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

被引：113

作者：

Xu, Q. ^{[1
]}

Sharp, I. D.

Yuan, C. W.

Yi, D. O.

Liao, C. Y.

Glaeser, A. M.

Minor, A. M.

Beeman, J. W.

Ridgway, M. C.

Kluth, P.

Ager, J. W., III

Chrzan, D. C.

Haller, E. E.

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[4] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.97.155701

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/- 17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

引用

页数：4

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