Observation of trap states in Er-doped InP by photoreflectance

被引：7

作者：

Nukeaw, J

Yanagisawa, J

Matsubara, N

Fujiwara, Y

Takeda, Y

机构：

[1] Dept. of Mat. Sci. and Engineering, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-01, Furo-cho

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 01期

关键词：

D O I：

10.1063/1.119315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated room-temperature photoreflectance (PR) spectra in Er-doped InP grown by low-pressure organometallic vapor phase epitaxy. A new feature is clearly observed at 1.31 eV, accompanied with a feature due to the bandgap transition at 1.35 eV. The new feature is attributed to a transition involving an Er trap. The transition energy is independent of both doping processing techniques and concentrations of Er in the layers. The PR spectral width of the trap transition energy described by the broadening parameter, increases linearly with the logarithm of Er concentrations. (C) 1997 American Institute of Physics.

引用

页码：84 / 86

页数：3

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