Organic inverter circuits employing ambipolar pentacene field-effect transistors

被引:93
作者
Singh, Th. B. [1 ]
Senkarabacak, P.
Sariciftci, N. S.
Tanda, A.
Lackner, C.
Hagelauer, R.
Horowitz, Gilles
机构
[1] Johannes Kepler Univ Linz, LIOS, A-4040 Linz, Austria
[2] Johannes Kepler Univ Linz, Inst Integrated Circuits, A-4040 Linz, Austria
[3] Univ Paris 07, CNRS, UMR 7086, ITODYS, F-75005 Paris, France
基金
奥地利科学基金会;
关键词
D O I
10.1063/1.2235947
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ambipolar transport has been observed in pentacene films grown on polyvinyl alcohol gate dielectric with hole and electron mobilities of 0.3 and 0.04 cm(2)/V s, respectively. A simple device structure with Au as source-drain electrode can be used to operate a transistor in both p-channel and n-channel modes without employing low work function metal electrodes for ambipolar charge injection. Using ambipolar pentacene field-effect transistors, we construct a complementary like inverter with voltage inversion gain of similar to 10. These inverters are able to operate both in first and third quadrants of the voltage output to voltage input characteristics which is a unique feature of employing ambipolar transistors. (c) 2006 American Institute of Physics.
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页数:3
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