Flicker noise properties of organic thin-film transistors

被引：64

作者：

Martin, S ^{[1
]}

Dodabalapur, A ^{[1
]}

Bao, Z ^{[1
]}

Crone, B ^{[1
]}

Katz, HE ^{[1
]}

Li, W ^{[1
]}

Passner, A ^{[1
]}

Rogers, JA ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.372354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz-10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal-oxide-semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. (C) 2000 American Institute of Physics. [S0021-8979(00)04007-X].

引用

页码：3381 / 3385

页数：5

共 23 条

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