Low pressure metalorganic vapor phase epitaxy and characterization of (Al,Ga)Sb/GaSb heterostructures

被引：8

作者：

Behet, M ^{[1
]}

Schneider, P ^{[1
]}

Moulin, D ^{[1
]}

Heime, K ^{[1
]}

Woitok, J ^{[1
]}

Tummler, J ^{[1
]}

Hermans, J ^{[1
]}

Geurts, J ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST PHYS 1, D-52074 AACHEN, GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 167卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(96)00260-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ternary AlxGa1-xSb layers and AlSb/GaSb multi-quantum-well structures were grown by low pressure metalorganic vapor phase epitaxy (LP-MOVPE). First, a comparative investigation on the GaSb and AlSb growth kinetics with the standard methyl and ethyl group-III precursors (TMGa, TMA1, TEGa, TEAI) was performed to establish which starting materials should be preferentially utilized. Our studies revealed that only the combination of the ethyl precursors TEGa, TEA1 and TESb exhibit a well matched reactivity for the LP-MOVPE deposition of (AI,Ga)Sb/GaSb heterostructures. Ternary AlxGa1-xSb layers (0 < x < 1) grown on GaSb substrates showed low temperature photoluminescence responses for Al contents smaller than the direct-indirect crossover concentration. Furthermore, GaSb/AlSb multi-quantum-well stacks with good structural and optical quality were deposited which could be verified by X-ray diffraction, Raman and photoluminescence measurements.

引用

页码：415 / 420

页数：6

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