On the semiconducting state and structural properties of YH3 from first principles theory

被引:46
作者
Ahuja, R
Johansson, B
Wills, JM
Eriksson, O
机构
[1] LOS ALAMOS NATL LAB,CTR MAT SCI,LOS ALAMOS,NM 87545
[2] LOS ALAMOS NATL LAB,DIV THEORET,LOS ALAMOS,NM 87545
关键词
D O I
10.1063/1.120371
中图分类号
O59 [应用物理学];
学科分类号
摘要
With the use of first principles theory we confirm the semiconducting ground state of the technologically interesting YH3 compound. Thus, unlike previously published theories, we demonstrate that density functional theory in the local density approximation reproduces the existence of a band gap. We also show that the HoD3 structure is the stable structure at ambient conditions, in agreement with experiment. In addition, we predict that moderate applied pressure will drive YH3 into the cubic structure. (C) 1997 American Institute of Physics. [S0003-6951(97)02050-0].
引用
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页码:3498 / 3500
页数:3
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