Thermal stability of supersaturated MgxZn1-xO alloy films and MgxZn1-xO/ZnO heterointerfaces

被引：135

作者：

Ohtomo, A ^{[1
]}

Shiroki, R

Ohkubo, I

Koinuma, H

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268502, Japan

[3] Japan Sci & Technol Corp, CREST, Osaka, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the thermal stability of wurtzite-phase MgxZn1-xO alloy films and ZnO/MgxZn1-xO bilayer films with x exceeding the reported solubility limit of 0.04. When a Mg0.23Zn0.78O film was annealed, the segregation of MgO started at 850 degrees C and the band gap was reduced to the value of that for an x = 0.15 film after annealing at 1000 degrees C. Mg0.15Zn0.85O films showed no change of the band gap even after annealing at 1000 degrees C. Therefore, we conclude that the thermodynamic solubility limit of MgO in MgxZn1-xO epitaxial film is about x = 0.15. The thermal diffusion of Mg across the MgxZn1-xO/ZnO interface was observed only after annealing above 700 degrees C. Unlike other II-VI semiconductors, ZnO-based alloy films and heterointerfaces are stable enough for the fabrication of high-crystallinity heterostructures. (C) 1999 American Institute of Physics. [S0003-6951(99)00852-9].

引用

页码：4088 / 4090

页数：3

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