Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

被引：34

作者：

Bundesmann, C ^{[1
]}

Ashkenov, N ^{[1
]}

Schubert, M ^{[1
]}

Rahm, A ^{[1
]}

Wenckstern, HV ^{[1
]}

Kaidashev, EM ^{[1
]}

Lorenz, M ^{[1
]}

Grundmann, M ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, Fak Phys & Geowissensch, D-04103 Leipzig, Germany

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

generalized infrared spectroscopic ellipsometry; a-Plane ZnO; phonon modes; epitaxial relation;

D O I：

10.1016/j.tsf.2003.11.226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm(-1) was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r-plane sapphire. Combined wavelength-by-wavelength analysis of data measured at multiple sample in-plane orientations allows for simultaneous extraction of the dielectric function (DF) tensor, the film thickness and the respective ZnO c-axis orientation, specifically in relation to the sapphire substrate. For anisotropic materials and use of generalized ellipsometry, the correlation problem between thickness and DF does not exist. Subsequent line shape analysis of ordinary and extraordinary DFs provides complete A(1)- and E-1-symmetry longitudinal and transverse optical phonon-mode and broadening parameters, together with the static dielectric constants. The epitaxial relations from the ellipsometry data analysis are (11-20)(ZnO)\\(01-12)(sapphire) and [0001](ZnO)\\[0-111](sapphire), which was confirmed by XRD measurements. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：161 / 166

页数：6

共 19 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[2] Infrared dielectric functions and phonon modes of high-quality ZnO films [J].

Ashkenov, N ;

Mbenkum, BN ;

Bundesmann, C ;

Riede, V ;

Lorenz, M ;

Spemann, D ;

Kaidashev, EM ;

Kasic, A ;

Schubert, M ;

Grundmann, M ;

Wagner, G ;

Neumann, H ;

Darakchieva, V ;

Arwin, H ;

Monemar, B .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :126-133

[3]

Azzam RM, 1989, ELLIPSOMETRY POLARIZ

[4] RAMAN-STUDY OF THE PHONON HALFWIDTHS AND THE PHONON PLASMON COUPLING IN ZNO [J].

BAIRAMOV, BH ;

HEINRICH, A ;

IRMER, G ;

TOPOROV, VV ;

ZIEGLER, E .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (01) :227-234

[5] Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x≤0.2) [J].

Bundesmann, C ;

Schubert, M ;

Spemann, D ;

Butz, T ;

Lorenz, M ;

Kaidashev, EM ;

Grundmann, M ;

Ashkenov, N ;

Neumann, H ;

Wagner, G .

APPLIED PHYSICS LETTERS, 2002, 81 (13) :2376-2378

[6] RESONANT RAMAN-SCATTERING IN ZNO [J].

CALLEJA, JM ;

CARDONA, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3753-3761

[7] DISPERSION OF RAMAN CROSS-SECTION IN CDS AND ZNO OVER A WIDE ENERGY RANGE [J].

CALLENDER, RH ;

SUSSMAN, SS ;

SELDERS, M ;

CHANG, RK .

PHYSICAL REVIEW B, 1973, 7 (08) :3788-3798

[8] RAMAN EFFECT IN ZINC OXIDE [J].

DAMEN, TC ;

PORTO, SPS ;

TELL, B .

PHYSICAL REVIEW, 1966, 142 (02) :570-&

[9] Optical functions of uniaxial ZnO determined by generalized ellipsometry [J].

Jellison, GE ;

Boatner, LA .

PHYSICAL REVIEW B, 1998, 58 (07) :3586-3589

[10] High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition [J].

Kaidashev, EM ;

Lorenz, M ;

von Wenckstern, H ;

Rahm, A ;

Semmelhack, HC ;

Han, KH ;

Benndorf, G ;

Bundesmann, C ;

Hochmuth, H ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3901-3903

← 1 2 →