Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations

被引:685
作者
Umebayashi, T
Yamaki, T
Itoh, H
Asai, K
机构
[1] Univ Tokyo, Grad Sch Engn, Fac Engn, Dept Quantum Engn & Syst Sci,Bunkyo Ku, Tokyo 1138656, Japan
[2] JAERI, Dept Mat Dev, Takasaki Radiat Chem Res Estab, Gunma 3701292, Japan
关键词
oxides; semiconductors; ab initio calculations; defects; electronic structure;
D O I
10.1016/S0022-3697(02)00177-4
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic structures of titanium dioxide (TiO2) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO2 is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the 0 p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t(2g) state of the dopant plays a significant role in the photoresponse of TiO2 under visible light irradiation. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1909 / 1920
页数:12
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