High-Performance Zinc Oxide Transistors and Circuits Fabricated by Spray Pyrolysis in Ambient Atmosphere

被引：188

作者：

Bashir, Aneeqa ^{[1
]}

Woebkenberg, Paul H. ^{[1
]}

Smith, Jeremy ^{[1
]}

Ball, James M. ^{[1
]}

Adamopoulos, George ^{[1
]}

Bradley, Donal D. C. ^{[1
]}

Anthopoulos, Thomas D. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, Blackett Lab, London SW7 2BW, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILM TRANSISTORS; ROOM-TEMPERATURE; COMPLEMENTARY CIRCUITS; ELECTRICAL-PROPERTIES; TRANSPARENT; ZNO; SEMICONDUCTORS; DEPOSITION; ELECTRONICS; NANORODS;

D O I：

10.1002/adma.200803584

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The use of a simple deposition technique, namely spray pyrolysis, for the fabrication of high-mobility, low-voltage ZnO transistors and simple integrated circuits is demonstrated. The method is compatible with large-area deposition and could potentially address both the issue of manufacturing cost and high operating voltages.

引用

页码：2226 / +

页数：7

共 40 条

[31] Tin oxide transparent thin-film transistors [J].

Presley, RE ;

Munsee, CL ;

Park, CH ;

Hong, D ;

Wager, JF ;

Keszler, DA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (20) :2810-2813

[32] Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution [J].

Studenikin, SA ;

Golego, N ;

Cocivera, M .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2104-2111

[33] Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods [J].

Sun, B ;

Sirringhaus, H .

NANO LETTERS, 2005, 5 (12) :2408-2413

[34] Low-temperature sintering of in-plane self-assembled ZnO nanorods for solution-processed high-performance thin film transistors [J].

Sun, Baoquan ;

Peterson, Rebecca L. ;

Sirringhaus, Henning ;

Mori, Kiyotaka .

JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (51) :18831-18835

[35]

Volkmann S. K., 2004, P IEEE, P769

[36] Stable indium oxide thin-film transistors with fast threshold voltage recovery [J].

Vygranenko, Yuriy ;

Wang, Kai ;

Nathan, Arokia .

APPLIED PHYSICS LETTERS, 2007, 91 (26)

[37] Transparent electronics [J].

Wager, JF .

SCIENCE, 2003, 300 (5623) :1245-1246

[38] High-performance transparent inorganic-organic hybrid thin-film n-type transistors [J].

Wang, Lian ;

Yoon, Myung-Han ;

Lu, Gang ;

Yang, Yu ;

Facchetti, Antonio ;

Marks, Tobin J. .

NATURE MATERIALS, 2006, 5 (11) :893-900

[39] Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics [J].

Woebkenberg, Paul H. ;

Ball, James ;

Kooistra, Floris B. ;

Hummelen, Jan C. ;

de Leeuw, Dago M. ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[40] Microcontact-printed self-assembled monolayers as ultrathin gate dielectrics in organic thin-film transistors and complementary circuits [J].

Zschieschang, Ute ;

Halik, Marcus ;

Klauk, Hagen .

LANGMUIR, 2008, 24 (05) :1665-1669

← 1 2 3 4 →