Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films

被引:40
作者
Köck, FAM [1 ]
Garguilo, JM [1 ]
Brown, B [1 ]
Nemanich, RJ [1 ]
机构
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
关键词
chemical vapor deposition (CVD); diamond; field emission;
D O I
10.1016/S0925-9635(02)00006-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitrogen-doped diamond films have been synthesized for application as a low-temperature thermionic field-emssion cathode. The critical result of this study is the observation of uniform electron emission from UV photo-excitation and from thermionic field emission for films terminated with hydrogen or a 0.3-nm Ti layer. The samples were imaged with photoelectron emission microscopy (PEEM) and thermionic field-emission electron microscopy (T-FEEM) at temperatures up to 900 degreesC, and the electron emission current was recorded vs. the applied voltage. Hydrogen-passivated films show enhanced electron emission, but become unstable at elevated temperatures, while Ti-terminated films showed similar enhanced emission at temperatures up to 950 degreesC. Temperature-dependent I/V measurements show strongly increased electron emission at higher temperatures, suggesting that electron emission originates from the conduction band. These results indicate a promising new material for the production of low-temperature, high-brightness electron sources. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:774 / 779
页数:6
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