Synthesis, evolution and hydrogen storage properties of ZnV2O4 glomerulus nano/microspheres: A prospective material for energy storage

被引：56

作者：

Butt, Faheem K. ^{[1
]}

Cao, Chuanbao ^{[1
]}

Wan, Qi ^{[2
]}

Li, Ping ^{[2
]}

Idrees, Faryal ^{[1
]}

Tahir, Muhammad ^{[1
]}

Khan, Waheed S. ^{[1
]}

Ali, Zulfiqar ^{[1
]}

Zapata, Maximiliano J. M. ^{[3
]}

Safdar, Muhammad ^{[4
]}

Qu, Xuanhui ^{[4
]}

机构：

[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China

[2] Univ Sci & Technol, Inst Adv Mat & Technol, Beijing 100083, Peoples R China

[3] Univ Fed Rio Grande do Sul, Inst Fis, Lab Filmes Finos & Fabricacao Nanoestruturas L3FN, BR-91501970 Porto Alegre, RS, Brazil

[4] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2014年 / 39卷 / 15期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

ZnV2O4; Nanospheres; Template free synthesis; Hydrogen storage; Reitveld analysis; TEMPLATE-FREE SYNTHESIS; HOLLOW SPHERES; OXIDE; PL; NANOCOMPOSITE; ZNO;

D O I：

10.1016/j.ijhydene.2014.03.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present first study on ZnV2O4 glomerulus nano/microspheres synthesize by template free route to expose its hydrogen storage potential. Besides this the evolution of nano/microspheres has been investigated in detail. To reveal possible growth mechanism of these spheres, time-dependent experiments are performed. Reitveld analysis is taken into account for calculation of lattice parameters, crystallite size and strain. From our results, a correlation between lattice parameters and crystallite size is observed. The strain decreases with the increase in reaction time. Hydrogen storage measurement reveals potential of ZnV2O4 nanospheres as a prospective material for energy storage applications. These studies can open new avenue of research for hydrogen storage in spinel oxide materials. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：7842 / 7851

页数：10

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