Electron beam induced current, cathodoluminescence and scanning photoluminescence study of GaN layers

被引：13

作者：

Avella, M

de la Puente, E

Jimenez, J ^{[1
]}

Castaldini, A

Cavallini, A

Polenta, L

机构：

[1] ETSI Ind, Dept Fis Mat Condensada, Valladolid 47011, Spain

[2] Univ Bologna, Dipartimento Fis, INFM, I-40127 Bologna, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

GaN; cathodluminescence; photoluminescence imaging; EBIC; minority carrier diffusion length; dislocations;

D O I：

10.1016/S0022-0248(99)00683-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hydride vapor phase epitaxy GaN layers were studied by electron beam induced current (EBIC), cathodoluminescence (CL) and scanning photoluminescence (SPL). Both blue and yellow luminescence distributions were studied, showing spatial correlation. CL and EBIC images revealed a granular structure with grain sizes around 1 mu m. The minority carrier diffusion length was measured obtaining values around 0.5-0.8 mu m, which were correlated to the size of the bright grains observed in EBIC and CL images. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：220 / 225

页数：6

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