The kinetics and mechanism of scanned probe oxidation of Si

被引：95

作者：

Snow, ES ^{[1
]}

Jernigan, GG ^{[1
]}

Campbell, PM ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the kinetics of scanned probe oxidation under conditions of high humidity and pulsed bias. For a hydrophobic Si surface the oxidation rate for short pulse times (similar to 10 ms) is controlled by the density of H2O molecules in the ambient humidity surrounding the tip-sample interface. At longer pulse times (similar to 0.1 s) liquid H2O bridges this interface and the maximum oxidation rate increases by a factor of similar to 10(4) because of the increased density of H2O molecules. We propose that the rate-limiting step of the oxidation process is the production of O anions from the ambient humidity. (C) 2000 American Institute of Physics. [S0003-6951(00)04013-4].

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页码：1782 / 1784

页数：3

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