Application of thin-film micromachining for large-area substrates

被引：1

作者：

Boucinha, M ^{[1
]}

Chu, V ^{[1
]}

Soares, V ^{[1
]}

Conde, JP ^{[1
]}

机构：

[1] INESC, P-1100 Lisbon, Portugal

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

10.1557/PROC-557-799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface micromachining is used with amorphous silicon, microcrystalline silicon, silicon nitride and aluminum films as structural materials to form bridge and cantilever structures. Low temperature processing (between 110 and 250 degrees C) allowed fabrication of structures and devices on glass substrates. Two processes involving different materials as the sacrificial layer are presented: silicon nitride and photoresist. The mechanical integrity of the fabricated structures is discussed. As examples of possible device applications of this technology, air-gap thin film transistors and the electrostatic actuation of bridges and cantilevers are presented.

引用

页码：799 / 807

页数：9

共 20 条

[1]

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[2]

Beer FP, 1992, MECH MAT

[3] Air-gap amorphous silicon thin film transistors [J].