Disordered zinc in Zn4Sb3 with phonon-glass and electron-crystal thermoelectric properties

被引:764
作者
Snyder, GJ
Christensen, M
Nishibori, E
Caillat, T
Iversen, BB
机构
[1] CALTECH, Pasadena, CA 91125 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Aarhus Univ, Dept Chem, DK-8000 Aarhus, Denmark
[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
D O I
10.1038/nmat1154
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.
引用
收藏
页码:458 / 463
页数:6
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