Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)

被引：24

作者：

Smith, S ^{[1
]}

Li, WM

Elers, KE

Pfeifer, K

机构：

[1] Int Sematech, Philips Semicond Assignees, Austin, TX USA

[2] ASM Microchem Ltd, Espoo, Finland

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

ALD; copper diffusion barrier; TiN; WNC; atomic layer deposition;

D O I：

10.1016/S0167-9317(02)00796-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of copper diffusion barrier films deposited by atomic layer deposition (ALD, ALCVD(TM)) on functional multilevel, dual damascene structures is in its infancy. In this study, two different ALD barrier films (TiN and WNC) were evaluated to determine how they affected the electrical properties of two-metal layer, dual damascene copper structures built in SiO2 In addition, bulk properties of each film were evaluated. It was found that ALD films show feasibility of functioning electrically in fully integrated interconnect structures as well as acting as a copper diffusion barrier and copper adhesion layer. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：247 / 253

页数：7