Nanowire growth on Si wafers by oxygen implantation and annealing

被引：11

作者：

de Vasconcelos, Elder A.

dos Santos, Fabio R. P.

da Silva, Eronides F., Jr.

Boudinov, Henri

机构：

[1] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

[2] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 15期

关键词：

silicon nanowires; ion implantation; stress;

D O I：

10.1016/j.apsusc.2005.12.140

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on nanowire formation on oxygen implanted Si wafers. In this method, a Si wafer is first oxygen-implanted and then annealed at high temperatures in At ambient to promote growth of nanowires with high aspect ratio. Their lengths range from several micrometers to thousands of micrometers and their diameters range from tens of nanometers to a few microns. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5572 / 5574

页数：3

共 8 条

[1] Universal theory of Si oxidation rate and importance of interfacial Si emission [J].