An 8% CuInSe2-based solar cell formed from an electrodeposited precursor film

被引：18

作者：

Fernandez, AM

Sebastian, PJ

Bhattacharya, RN

Noufi, R

Contreras, M

Hermanns, AM

机构：

[1] NATL RENEWABLE ENERGY LAB, GOLDEN, CO 80401 USA

[2] UNIV COLORADO, DEPT PHYS, BOULDER, CO 80309 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 06期

关键词：

D O I：

10.1088/0268-1242/11/6/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An 8% CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 550 degrees C in Se and In atmospheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as J(sc) = 32.1 mA cm(-2) V-oc = 394 mV, FF = 62.3% and eta = 7.9% were determined from I-V characterization of the annealed cell at a light intensity of 1000 W m(-2). The cell parameters improved after annealing in air at 200 degrees C. A carrier density of 6.3 x 10(17) cm(-3) was obtained from the C-V characterization of the cell.

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页码：964 / 967

页数：4

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