Weak localization in back-gated Si/Si0.7Ge0.3 quantum-well wires fabricated by reactive ion etching

被引:23
作者
Koester, SJ
Ismail, K
Lee, KY
Chu, JO
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 15期
关键词
D O I
10.1103/PhysRevB.54.10604
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic properties of Si/Si0.7Ge0.3 quantum-well wires fabricated by reactive ion etching are investigated. The width of the nonconducting layer produced by the dry-etch damage and surface depletion is determined by plotting the conductance vs wire width for wires with lithographic widths ranging from 0.10 to 1.0 mu m. The combined width of the so-called ''dead layers'' on each edge of the wire is determined to be as small as 0.13 +/- 0.01 mu m. Quantum interference effects are studied in wires with lithographic widths of W = 0.23 mu m. One-dimensional (1D) weak localization is evident in these wires at T = 1.3 K in the form of a pronounced negative magnetoresistance for \B\less than or equal to 0.3 T. A back-gate contact is used to study the electron-transport properties in the wires, as a function of the electron sheet concentration, n(s). The data have been fitted to the 1D theory of weak localization, and indicate that the inelastic mean free path L(phi), increases from 0.2 to 1.2 mu m as n(s) is increased from 4.2 x 10(11) to 5.9 x 10(11) cm(-2) at T = 1.3 K.
引用
收藏
页码:10604 / 10608
页数:5
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