Particle size distribution and dislocation density determined by high resolution X-ray diffraction in nanocrystalline silicon nitride powders

被引:70
作者
Gubicza, J
Szépvölgyi, J
Mohai, I
Zsoldos, L
Ungár, T
机构
[1] Eotvos Lorand Univ, Dept Gen Phys, H-1518 Budapest, Hungary
[2] Hungarian Acad Sci, Chem Res Ctr, Res Lab Mat & Environm Chem, H-1025 Budapest, Hungary
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2000年 / 280卷 / 02期
基金
匈牙利科学研究基金会;
关键词
X-ray line profile analysis; nanocrystalline silicon nitride; particle size distribution; dislocation density;
D O I
10.1016/S0921-5093(99)00702-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two silicon nitride powders were investigated by high resolution X-ray diffraction. The first sample was crystallized from the powder prepared by the vapour phase reaction of silicon tetrachloride and ammonia while the second was a commercial powder produced by the direct nitridation of silicon. Their particle size and dislocation density were obtained by the recently developed modified Williamson-Hall and Warren-Averbach procedures from X-ray diffraction profiles. Assuming that the particle size distribution is log-normal the size distribution function was calculated from the size parameters derived from X-ray diffraction profiles. The size distributions determined from TEM micrographs were in good correlation with the X-ray results. The area-weighted average particle size calculated from nitrogen adsorption isotherms was in good agreement with that obtained from X-rays. The powder produced by silicon nitridation has a wider size distribution with a smaller average size than the powder prepared by vapour phase reaction. The dislocation densities were found to be between about 10(14) and 10(15) m(-2). Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:263 / 269
页数:7
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