Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy

被引：51

作者：

Toyoda, S

Okabayashi, J

Kumigashira, H

Oshima, M ^{[1
]}

Ono, K

Niwa, M

Usuda, K

Hirashita, N

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

[3] Semicond Technol Acad Res Ctr, Kohoku Ku, Kanagawa 2220033, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2004年 / 137卷

关键词：

photoelectron spectroscopy; X-ray absorption spectroscopy; HfO2; gate insulator; band offsets;

D O I：

10.1016/j.elspec.2004.02.083

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

High-resolution photoelectron spectroscopy and x-ray absorption spectroscopy (XAS) measurements have been performed on HfO2 films grown on Si(0 0 1) for ULSI ultra-thin gate insulators to elucidate the chemistry and band offsets of interfacial silicate layers. The valence-band discontinuity is determined by subtracting valence-band spectra of H-terminated Si(0 0 1) from those of the HfO2 films on Si which have a HfO2/Hf1-xSixO2/Si double layer structure. On the other hand, the conduction-band discontinuity is clearly deduced by oxygen K-edge absorption spectra and O 1s photoelectron spectra. Consequently, two kinds of energy-band offsets of HfO2/Hf1-xSixO2 and Hf1-xSixO2/Si are determined separately. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：141 / 144

页数：4

共 15 条

[1] Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission [J].